Semiconductor
High-Frequency Ultrasonic Imaging for Wafer and Package Integrity
Semiconductor devices demand defect-free internal interfaces at the micron scale, where even tiny voids or delaminations can cause catastrophic electrical failure. Scanning acoustic microscopy (SAM) and high-frequency ultrasonic C-scan are the established non-destructive methods for inspecting wafer bonding, flip-chip solder joints, encapsulation interfaces, and advanced packaging structures. CCNDT delivers precision ultrasonic inspection solutions capable of resolving sub-micron interfacial defects across the semiconductor manufacturing chain.
Wafer Bonding & Substrate Inspection
Direct wafer bonding, anodic bonding, and adhesive bonding are foundational processes in MEMS, SOI, and 3D IC fabrication. Bonding voids, unbonded regions, and interface contamination directly compromise device yield and reliability. High-frequency ultrasonic C-scan imaging detects these defects non-destructively through the full wafer thickness, providing quantitative void maps that correlate with electrical test results.
- Detection of bonding voids, unbonded areas, and particle contamination at wafer interfaces
- Frequency range from 15 MHz to over 100 MHz for micron-level resolution
- Full-wafer automated scanning with throughput compatible with production environments
- Supports 2.5D/3D integration, TSV, and hybrid bonding process qualification
Package & Solder Joint Integrity
Flip-chip BGA, QFN, and advanced package formats contain hundreds to thousands of solder interconnects hidden beneath the die and molding compound. Delamination at the die-attach interface, solder voids, and non-wet conditions are leading causes of field failures. Ultrasonic C-scan in reflection mode produces depth-gated images that isolate specific interfaces, enabling precise defect localization without decapsulation.
- Flip-chip solder bump void and non-wet detection through mold compound
- Die-attach and underfill delamination mapping
- Wire bond pad interface quality assessment
- Compliant with IPC/JEDEC and automotive-grade zero-defect requirements
Advanced Packaging & Emerging Applications
As semiconductor packaging evolves toward chiplet architectures, heterogeneous integration, and fan-out wafer-level packaging, inspection complexity increases dramatically. Multi-layer stacked dies, redistribution layers, and micro-bump arrays each introduce new interface types requiring tailored ultrasonic parameters. CCNDT's configurable inspection platforms adapt frequency, focal depth, and gating strategies to address these evolving challenges.
- Chiplet and heterogeneous integration interface inspection
- Micro-bump array integrity verification in 2.5D/3D packages
- Redistribution layer (RDL) and through-silicon via (TSV) defect detection
- Configurable multi-channel systems for R&D and high-volume production
Talk to Our NDT Engineers
Tell us about your inspection target and we will recommend the right ultrasonic solution.